- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98011 > MBT3906DW1T1 (MOTOROLA INC) 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MBT3906DW1T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 277K |
| 代理商： | MBT3906DW1T1 |
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MBT3904DW1T1 (NPN)
(IC = –1.0 mAdc, IB = 0)
MBT3906DW1T1 (PNP)
V(BR)CEO
40
–40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, IE = 0)
MBT3906DW1T1 (PNP)
V(BR)CBO
60
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MBT3904DW1T1 (NPN)
(IE = –10 mAdc, IC = 0)
MBT3906DW1T1 (PNP)
V(BR)EBO
6.0
–5.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
MBT3904DW1T1 (NPN)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MBT3906DW1T1 (PNP)
IBL
—
50
–50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
MBT3904DW1T1 (NPN)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MBT3906DW1T1 (PNP)
ICEX
—
50
–50
nAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
MBT3904DW1T1 (NPN)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
MBT3906DW1T1 (PNP)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
40
70
100
60
30
60
80
100
60
30
—
300
—
300
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
MBT3906DW1T1 (PNP)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
—
0.2
0.3
–0.25
–0.4
Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
MBT3906DW1T1 (PNP)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
0.65
—
–0.65
—
0.85
0.95
–0.85
–0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
MBT3906DW1T1 (PNP)
fT
300
250
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MBT3904DW1T1 (NPN)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
MBT3906DW1T1 (PNP)
Cobo
—
4.0
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MBT3904DW1T1 (NPN)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
MBT3906DW1T1 (PNP)
Cibo
—
8.0
10.0
pF
2. Pulse Test: Pulse Width
≤ 300 s; Duty Cycle ≤ 2.0%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC-10118BF1-ENY-A | SPECIALTY MICROPROCESSOR CIRCUIT, PBGA481 |
| MC141555P1 | UNIVERSAL SERIAL BUS CONTROLLER, PDIP28 |
| MC141556P | UNIVERSAL SERIAL BUS CONTROLLER, PDIP28 |
| MC14536BDWR2 | 1 TIMER(S), PROGRAMMABLE TIMER, PDSO16 |
| MC146805F2CFNR2 | 8-BIT, MROM, MICROCONTROLLER, PQCC28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3906DW1T1G | 功能描述:兩極晶體管 - BJT SS GP XSTR PNP 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。