參數(shù)資料
型號(hào)： MBT35200MT1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
中文描述： 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 318G-02, TSOP-6
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 81K
代理商： MBT35200MT1
Semiconductor Components Industries, LLC, 2000
August, 2000 – Rev. 1
1
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
A Device of the X
Family
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
–35
Vdc
Collector-Base Voltage
V
CBO
–55
Vdc
Emitter-Base Voltage
V
EBO
–5.0
Vdc
Collector Current — Continuous
I
C
–2.0
Adc
Collector Current — Peak
I
CM
–5.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1.)
625
5.0
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 1.)
200
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2.)
1.0
8.0
W
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 2.)
120
°
C/W
Thermal Resistance,
Junction to Lead #1
R
θ
JL
80
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Notes 2. & 3.)
1.75
W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
Device
Package
Shipping
ORDERING INFORMATION
MBT35200MT1
Case 318G
http://onsemi.com
CASE 318G
TSOP
STYLE 6
3000/Tape & Reel
DEVICE MARKING
4
56
321
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
G4 (date code)
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參數(shù)描述
MBT35200MT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
MBT35200MT1G 功能描述:兩極晶體管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT35200MT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MBT35200MT2G 功能描述:兩極晶體管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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