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參數資料
| 型號： | MBRS1100TR |
| 廠商： | International Rectifier |
| 英文描述： | SCHOTTKY RECTIFIER |
| 中文描述： | 肖特基整流器 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | MBRS1100TR |
1
Rectifier Device Data
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in
a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally
suited for low voltage, high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state-of-the-art devices have the
following features:
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage — 100 Volts
150
°
C Operating Junction Temperature
Guardring for Stress Protection
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes: 260
°
C
Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Marking: B110
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Volts
Average Rectified Forward Current
TL = 120
°
C
TL = 100
°
C
IF(AV)
1.0
2.0
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
50
Amps
Operating Junction Temperature
TJ
dv/dt
– 65 to +150
°
C
Voltage Rate of Change
10
V/ns
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Lead (TL = 25
°
C)
ELECTRICAL CHARACTERISTICS
R
θ
JL
22
°
C/W
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25
°
C)
VF
0.75
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25
°
C)
(Rated dc Voltage, TJ = 100
°
C)
iR
0.5
5.0
mA
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Order this document
by MBRS1100T3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
CASE 403A–03
Motorola Preferred Device
Rev 2
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| MBRS140LT3 | Surface Mount Schottky Power Rectifier |
| MBRS140T3 | Surface Mount Schottky Power Rectifier |
| MBRS140TR | 1 Amp Schottky Rectifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBRS1100TRPBF | 功能描述:DIODE SCHOTTKY 100V 1A SMB RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBRS1100TRPBF | 制造商:International Rectifier 功能描述:Schottky Rectifier |
| MBRS110ST3G | 制造商:ON Semiconductor 功能描述: |
| MBRS120 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SCHOTTKY RECTIFIER 1 Amp |
| MBRS120-FL | 制造商:GXELECTRONICS 制造商全稱:Gaomi Xinghe Electronics Co., Ltd. 功能描述:Low power loss,high efficiency |
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