參數(shù)資料
型號: MBRS140TR
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: 參考電壓二極管
英文描述: 1 Amp Schottky Rectifier
中文描述: 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214BA
封裝: DO-214BA, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 139K
代理商: MBRS140TR
1
Rectifier Device Data
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 95 mg (approximately)
Polarity: Notch in Plastic Body Indicates Cathode Lead
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13
Reel, Add “T3” Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Marking: B14L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
Volts
Average Rectified Forward Current (At Rated VR, TC = 110
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110
°
C)
IO
1.0
Amps
IFRM
2.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
40
Amps
Storage / Operating Case Temperature
Tstg, TC
TJ
dv/dt
– 55 to +150
°
C
Operating Junction Temperature
– 55 to +125
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Lead (2)
Thermal Resistance — Junction–to–Ambient (2)
10,000
V/ s
R
θ
JL
R
θ
JA
24
80
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
VF
TJ = 25
°
C
0.5
0.6
TJ = 125
°
C
0.425
0.58
Volts
(IF = 1.0 A)
(IF = 2.0 A)
see Figure 2
Maximum Instantaneous Reverse Current
IR
TJ = 25
°
C
0.4
0.02
TJ = 100
°
C
10
5.0
mA
(VR = 40 V)
(VR = 20 V)
see Figure 4
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width
250
μ
s, Duty Cycle
2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
Order this document
by MBRS140LT3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
CASE 403A–03
SMB
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