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參數(shù)資料
| 型號： | MBRD660CTTRRPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封裝： | SIMILAR TO TO-252AA, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MBRD660CTTRRPBF |
MBRD650CT, MBRD660CT
2
Bulletin PD-20755 rev. C 03/03
www.irf.com
V
FM
Max. Forward Voltage Drop
0.7
V
@
3A
(Per Leg) * See Fig. 1
(1)
0.9
V
@
6A
0.65
V
@
3A
0.85
V
@
6A
I
RM
Max. Reverse Leakage Current
0.1
mA
T
J
= 25 °C
(Per Leg) * See Fig. 2
(1)
15
mA
T
J
= 125 °C
CT
Typ. Junction Capacitance (Per Leg)
145
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LS
Typical Series Inductance (Per Leg)
5.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
TJ
Max. Junction Temperature Range (*) -40 to 150
°C
Tstg
Max. Storage Temperature Range
-40 to 150
°C
R
thJC
Max. Thermal Resistance (Per Leg)
6
°C/W DC operation
* See Fig. 4
Junction to Case
(Per Device)
3
R
thJA
Max. Thermal Resistance Junction
80
°C/W
to Ambient
wt
Approximate Weight
0.3 (0.01)
g (oz.)
Case Style
D-Pak
Similar to TO-252AA
Thermal-Mechanical Specifications
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle <2%
V
R
= rated V
R
Part number
MBRD650CT
MBRD660CT
V
R
Max. DC Reverse Voltage (V)
50
60
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters
Value
Units
Conditions
Parameters
Value
Units
Conditions
I
F(AV)
Max. Average Forward(Per Leg)
3.0
A
50% duty cycle @ T
C
= 128°C, rectangular wave form
Current * See Fig. 5
(Per Device)
6
I
FSM
Max.PeakOneCycleNon-Repetitive
490
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
75
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repet. Aval. Energy (PerLeg)
6
mJ
T
J
= 25 °C, I
AS
= 1 Amp, L = 12 mH
I
AR
Repetitive Avalanche Current
0.6
A
Current decaying linearly to zero in 1 sec
(Per Leg)
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM applied
A
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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