參數(shù)資料
型號(hào)： MBRF10150CT
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 整流器
英文描述： 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC, ITO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 81K
代理商： MBRF10150CT
MBRF10150CT thru 10200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 to 200 Volts
FORWARD CURRENT - 10 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
120
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
TC =135 C
MBRF10150CT
150
105
150
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
REV. 3, Oct-2010, KTHC38
MBRF10200CT
200
140
200
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
PIN 1
PIN 3
PIN 2
R0JC
Typical Thermal Resistance (Note 2)
5.0
C/W
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
8
2
uA
mA
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
VF
V
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=10A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
0.92
0.75
1.00
0.85
Typical Junction Capacitance
per element (Note 3)
CJ
120
pF
TJ,
TSTG
Operating Junction and Storage
Temperature Range
-65 to +175
℃
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
IRRM
Peak Repetitive Reverse Current
tp=2us, square F=1KHz
1
A
@TJ
=25 C
相關(guān)PDF資料
PDF描述
MBRF10150 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF1060 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF1090 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AC
MBRF1050 10 A, 50 V, SILICON, RECTIFIER DIODE
MBRF1080CT-G 10 A, SILICON, RECTIFIER DIODE, TO-220AB
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