參數(shù)資料
型號(hào): MBRB3030CTL
廠商: MOTOROLA INC
元件分類: 整流器
英文描述: 15 A, 30 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 6/8頁
文件大小: 158K
代理商: MBRB3030CTL
MBRB3030CTL
6
Rectifier Device Data
Figure 13 illustrates the example. Note the UIS character-
ization curve, the parasitic inductor current curve and the safe
operating region as indicated.
Figure 13. DUT Peak Reverse and Circuit
Parasitic Inductance Current versus Time
TIME (s)
0.0005
0.001 0.0015
0.002
0.0025
0
0.003 0.0035 0.004
120
100
80
60
40
20
0
UIS CHARACTERIZATION CURVE
SAFE OPERATING AREA
Ipeak — TIME RELATIONSHIP
DUE TO CIRCUIT PARASITICS
SUMMARY
Traditionally, power rectifier users have been supplied with
single–data–point reverse–energy characteristics by the sup-
plier’s device data sheet; however, as has been shown here
and in previous work, the reverse withstand energy can vary
significantly depending on the application. What was done in
this work was to create a characterization scheme by which
the designer can overlay or map their particular requirements
onto the part capability and determine quite accurately if the
chosen device is applicable. This characterization technique
is very robust due to its statistical approach, and with proper
guardbanding (6
s) can be used to give worst–case device per-
formance for the entire product line. A “typical” characteristic
curve is probably the most applicable for designers allowing
them to design in their own margins.
References
1. Borras, R., Aliosi, P., Shumate, D., 1993, “Avalanche
Capability of Today’s Power Semiconductors, “Proceed-
ings, European Power Electronic Conference,” 1993,
Brighton, England
2. Pshaenich, A., 1985, “Characterizing Overvoltage Tran-
sient Suppressors,” Powerconversion International,
June/July
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