- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224198 > MBRB3030CTL (MOTOROLA INC) 15 A, 30 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | MBRB3030CTL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 30 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 158K |
| 代理商： | MBRB3030CTL |
MBRB3030CTL
5
Rectifier Device Data
Suggested Method of Characterization
Figure 11. Typical Voltage and Current UIS
Waveforms
TIME (s)
INDUCTOR
CURRENT
DUT
REVERSE
VOLTAGE
Utilizing the UIS test circuit in Figure 10, devices are tested
to failure using inductors ranging in value from 0.01 to 159 mH.
The reverse voltage and current waveforms are acquired to
determine the exact energy seen by the device and the induc-
tive current decay time. At least 4 distinct inductors and 5 to
10 devices per inductor are used to generate the characteristic
current versus time relationship. This relationship when
coupled with the application circuit conditions, defines the
SOA of the device uniquely for this application.
Example Application
The device used for this example was an MBR3035CT,
which is a 30 A (15 A per side) forward current, 35 V reverse
breakdown voltage rectifier. All parts were tested to destruc-
tion at 25
°C. The inductors used for the characterization were
10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing
were peak reverse current (Ip), peak reverse breakdown volt-
age (BVR), maximum withstand energy, inductance and in-
ductor discharge time (see Table 1). A plot of the Peak Re-
verse Current versus Time at device destruction, as shown in
Figure 12, was generated. The area under the curve is the re-
gion of lower reverse energy or lower stress on the device.
This area is known as the safe operating area or SOA.
Figure 12. Peak Reverse Current versus
Time for DUT
TIME (s)
0.0005
0.001 0.0015
0.002
0.0025
0
0.003 0.0035 0.004
120
100
80
60
40
20
0
UIS CHARACTERIZATION CURVE
SAFE OPERATING AREA
Table 1. UIS Test Data
PART
NO.
IP (A)
BVR (V)
ENERGY
(mJ)
L (mH)
TIME
(
ms)
1
46.6
65.2
998.3
1
715
2
41.7
63.4
870.2
1
657
3
46.0
66.0
1038.9
1
697
4
42.7
64.8
904.2
1
659
5
44.9
64.8
997.3
1
693
6
44.1
64.1
865.0
1
687
7
26.5
63.1
1022.6
3
1261
8
26.4
62.8
1024.9
3
1262
9
24.4
62.2
872.0
3
1178
10
27.6
62.9
1091.0
3
1316
11
27.7
63.2
1102.4
3
1314
12
17.9
62.6
1428.6
10
2851
13
18.9
62.1
1547.4
10
3038
14
18.8
60.7
1521.1
10
3092
15
19.0
62.6
1566.2
10
3037
16
74.2
69.1
768.4
0.3
322
17
77.3
69.6
815.4
0.3
333
18
75.2
68.9
791.7
0.3
328
19
77.3
69.6
842.6
0.3
333
20
73.8
69.1
752.4
0.3
321
21
75.6
69.2
823.2
0.3
328
22
74.7
68.6
747.5
0.3
327
23
78.4
70.3
834.0
0.3
335
24
70.5
66.6
678.4
0.3
317
25
78.3
69.4
817.3
0.3
339
The procedure to determine if a rectifier is appropriate, from
a reverse energy standpoint, to be used in the application cir-
cuit is as follows:
a. Obtain “Peak Reverse Current versus Time” curve from
data book.
b. Determine steady state operating voltage (OV) of circuit.
c. Determine parasitic inductance (L) of circuit section of
interest.
d. Obtain rated breakdown voltage (BVR) of rectifier from
data book.
e. From the following relationships,
V
+ L @ d
dt
i(t)
I
+
(BVR
* OV) @ t
L
a “designer” l versus t curve is plotted alongside the device
characteristic plot.
f. The point where the two curves intersect is the current
level where the devices will start to fail. A peak inductor
current below this intersection should be chosen for safe
operating.
As an example, the values were chosen as L = 200
mH,
OV = 12 V and BVR = 35 V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRF10100CTL | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF845 | 8 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRFB735 | 7.5 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRP20060CT | 150 A, 60 V, SILICON, RECTIFIER DIODE |
| MBRS130LMA | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB3030CTLG | 功能描述:肖特基二極管與整流器 30A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB3030CTLP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK Tube 制造商:Vishay Semiconductors 功能描述:Schottky Rectifier |
| MBRB3030CTLPBF_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| MBRB3030CTLTRL | 功能描述:肖特基二極管與整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。