參數(shù)資料
型號(hào): MBRB3030CTL
廠商: MOTOROLA INC
元件分類: 整流器
英文描述: 15 A, 30 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 4/8頁
文件大?。?/td> 158K
代理商: MBRB3030CTL
MBRB3030CTL
4
Rectifier Device Data
Modeling Reverse Energy Characteristics
of Power Rectifiers
Prepared by: David Shumate & Larry Walker
Motorola Semiconductor Products Sector
ABSTRACT
Power semiconductor rectifiers are used in a variety of ap-
plications where the reverse energy requirements often vary
dramatically based on the operating conditions of the applica-
tion circuit. A characterization method was devised using the
Unclamped Inductive Surge (UIS) test technique. By testing
at only a few different operating conditions (i.e. different induc-
tor sizes) a safe operating range can be established for a de-
vice. A relationship between peak avalanche current and in-
ductor discharge time was established. Using this relationship
and circuit parameters, the part applicability can be deter-
mined. This technique offers a power supply designer the total
operating conditions for a device as opposed to the present
single–data–point approach.
INTRODUCTION
In today’s modern power supplies, converters and other
switching circuitry, large voltage spikes due to parasitic induc-
tance can propagate throughout the circuit, resulting in cata-
strophic device failures. Concurrent with this, in an effort to
provide low–loss power rectifiers, i.e. devices with lower for-
ward voltage drops, schottky technology is being applied to
devices used in this switching power circuitry. This technology
lends itself to lower reverse breakdown voltages. This com-
bination of high voltage spikes and low reverse breakdown
voltage devices can lead to reverse energy destruction of
power rectifiers in their applications. This phenomena, howev-
er, is not limited to just schottky technology.
In order to meet the challenges of these situations, power
semiconductor manufacturers attempt to characterize their
devices with respect to reverse energy robustness. The typi-
cal reverse energy specification, if provided at all, is usually
given as energy–to–failure (mJ) with a particular inductor spe-
cified for the UIS test circuit. Sometimes, the peak reverse test
current is also specified. Practically all reverse energy charac-
terizations are performed using the UIS test circuit shown in
Figure 10. Typical UIS voltage and current waveforms are
shown in Figure 11.
In order to provide the designer with a more extensive char-
acterization than the above mentioned one–point approach,
a more comprehensive method for characterizing these de-
vices was developed. A designer can use the given informa-
tion to determine the appropriateness and safe operating area
(SOA) of the selected device.
Figure 10. Simplified UIS Test Circuit
HIGH SPEED SWITCH
CHARGE INDUCTOR
DUT
GATE
VOLTAGE
DRAIN VOLTAGE
DRAIN CURRENT
INDUCTOR
CHARGE
SWITCH
FREE–WHEELING
DIODE
V
+
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