- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382289 > MBR0520LTI (National Semiconductor Corporation) DB-LM3S102 Daughterboard PDF資料下載
參數(shù)資料
| 型號： | MBR0520LTI |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | DB-LM3S102 Daughterboard |
| 中文描述： | 同步降壓控制器，帶有預(yù)偏置啟動和可選時鐘同步 |
| 文件頁數(shù)： | 19/23頁 |
| 文件大小： | 1002K |
| 代理商： | MBR0520LTI |
Application Information
(Continued)
P
SW
= 0.5 x 3.3V x 4A x 300 kHz x 31 ns
P
SW
= 61.38 mW
The FDS6898A has a typical turn-on rise time t
and turn-off
fall time t
of 15 ns and 16 ns, respectively. The switching
losses for this type of dual N-Channel MOSFETs are
0.061W.
FET Conduction Loss (P
CND
)
P
CND
= P
CND1
+ P
CND2
P
CND1
= I
2OUT
x R
DS(ON)
x k x D
P
CND2
= I
2OUT
x R
DS(ON)
x k x (1-D)
R
DS(ON)
= 13 m
and the factor is a constant value (k = 1.3)
to account for the increasing R
DS(ON)
of a FET due to heat-
ing.
P
CND1
= (4A)
2
x 13 m
x 1.3 x 0.364
P
CND2
= (4A)
2
x 13 m
x 1.3 x (1 - 0.364)
P
CND
= 98.42 mW + 172 mW = 270.42 mW
There are few additional losses that are taken into account:
IC Operating Loss (P
IC)
P
IC
= I
Q_VCC
x V
CC
,
where I
Q-VCC
is the typical operating V
CC
current
P
IC
= 1.7 mA x 3.3V = 5.61 mW
FET Gate Charging Loss (P
GATE
)
P
GATE
= n x V
CC
x Q
GS
x f
SW
P
GATE
= 2 x 3.3V x 3 nC x 300 kHz
P
GATE
= 5.94 mW
The value n is the total number of FETs used and Q
is the
typical gate-source charge value, which is 3 nC. For the
FDS6898A the gate charging loss is 5.94 mW.
Input Capacitor Loss (P
CAP
)
where,
Here n is the number of paralleled capacitors, ESR is the
equivalent series resistance of each, and P
CAP
is the dissi-
pation in each. So for example if we use only one input
capacitor of 24 m
.
P
CAP
= 88.8 mW
Output Inductor Loss (P
IND
)
P
IND
= I
2OUT
x DCR
where DCR is the DC resistance. Therefore, for example
P
IND
= (4A)
2
x 11 m
P
IND
= 176 mW
Total System Efficiency
P
TOTAL
= P
FET
+ P
IC
+ P
GATE
+ P
CAP
+ P
IND
L
www.national.com
19
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR1100 | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS |
| MBR1100RL | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS |
| MBR130LSFT1 | Surface Mount Schottky Power Rectifier Plastic SOD−123 Package |
| MBR130 | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS |
| MBR130T1 | SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR0520LTJ | 制造商:ARC-TRONICS 功能描述: |
| MBR0520L-TP | 功能描述:DIODE SCHOTTKY 0.5A 20V SOD-123 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR0520LW | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Schottky Rectifier Diodes |
| MBR0520-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| MBR0520-N | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。