- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382289 > MBM29PL12LM10PCN (FUJITSU LTD) FLASH MEMORY 128 M (16M ?8/8M ?16) BIT PDF資料下載
參數(shù)資料
| 型號： | MBM29PL12LM10PCN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY 128 M (16M ?8/8M ?16) BIT |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | PLASTIC, TSOP1-56 |
| 文件頁數(shù)： | 36/72頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | MBM29PL12LM10PCN |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁當前第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
MBM29PL12LM
10
36
DQ
5
Exceeded Timing Limits
DQ
5
will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under
these conditions DQ
5
will produce a “1”. This is a failure condition indicating that the program or erase cycle was
not successfully completed. Data Polling is the only operating function of the device under this condition. The
CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE
pins will control the output disable functions as described in “MBM29PL12LM User Bus Operations (Word
Mode : BYTE = V
IH
)” and “MBM29PL12LM User Bus Operations (Byte Mode : BYTE = V
IL
)” in
■
DEVICE BUS
OPERATION.
The DQ
5
failure condition may also appear if a user tries to program a non blank location without pre-erase. In
this case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never
reads a valid data on DQ
7
bit and DQ
6
never stop toggling. Once the device has exceeded timing limits, the DQ
5
bit will indicate a “1”. Note that this is not a device failure condition since the device was incorrectly used. If this
occurs, reset the device with command sequence.
DQ
3
Sector Erase Timer
After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ
3
will
remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase
command sequence.
If Data Polling or the Toggle Bit I indicates a valid erase command has been written, DQ
3
may be used to
determine whether the sector erase timer window is still open. If DQ
3
is “1” the internally controlled erase cycle
has begun. If DQ
3
is “0”, the device will accept additional sector erase commands. To insure the command has
been accepted, the system software should check the status of DQ
3
prior to and following each subsequent
Sector Erase command. If DQ
3
were high on the second status check, the command may not have been accepted.
See “Hardware Sequence Flags”.
DQ
2
Toggle Bit II
This Toggle bit II, along with DQ
6
, can be used to determine whether the devices are in the Embedded Erase
Algorithm or in Erase Suspend.
Successive reads from the erasing sector will cause DQ
2
to toggle during the Embedded Erase Algorithm. If the
devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause
DQ
2
to toggle. When the device is in the erase-suspended-program mode, successive reads from the non-erase
suspended sector will indicate a logic “1” at the DQ
2
bit.
DQ
6
is different from DQ
2
in that DQ
6
toggles only when the standard program or Erase, or Erase Suspend
Program operation is in progress. The behavior of these two status bits, along with that of DQ
7
, is summarized
as follows:
For example, DQ
2
and DQ
6
can be used together to determine if the erase-suspend-read mode is in progress.
(DQ
2
toggles while DQ
6
does not.) See also “Hardware Sequence Flags” and “DQ
2
vs. DQ
6
” in
■
TIMING DIA-
GRAM.
Furthermore, DQ
2
can also be used to determine which sector is being erased. At the erase mode, DQ
2
toggles
if this bit is read from an erasing sector.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM30LV0064-PFTN | 64M (8M X 8) BIT NAND-type |
| MBM30LV0064-PFTR | 64M (8M X 8) BIT NAND-type |
| MBM30LV0032 | 32M (4M X 8) BIT NAND-type |
| MBM30LV0032-PFTN | 32M (4M X 8) BIT NAND-type |
| MBM30LV0032-PFTR | RES 150-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM30000 | 功能描述:BRACKET SIDE MOUNT RoHS:是 類別:工業(yè)控制，儀表 >> 配件 系列:* 標準包裝:1 系列:Aero-Motive® 130117 附件類型:拖車帶 適用于相關產品:標準盒式跟蹤系統(tǒng) 其它名稱:WM6183 |
| MBM30035001 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM30035015 | 制造商:LG Corporation 功能描述:Card,Technical |
| MBM300A6 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES |
| MBM300GR12A | 制造商:n/a 功能描述:IGBT Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。