參數(shù)資料
型號(hào): MBM29PL12LM10PCN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝: PLASTIC, TSOP1-56
文件頁數(shù): 23/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM10PCN
MBM29PL12LM
10
23
Common Flash Memory Interface Code
(Continued)
A
0
to A
6
DQ
0
to DQ
15
Description
10h
11h
12h
13h
14h
0051h
0052h
0059h
0002h
0000h
Query-unique ASCII string “QRY”
Primary OEM Command Set
(02h = Fujitsu standard)
15h
16h
17h
18h
0040h
0000h
0000h
0000h
Address for Primary Extended Table
Alternate OEM Command Set
(00h = not applicable)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table
(00h = not applicable)
V
CC
Min (write/erase)
DQ
7
to DQ
4
: 1V/bit,
DQ
3
to DQ
0
: 100 mV/bit
1Bh
0027h
1Ch
0036h
V
CC
Max (write/erase)
DQ
7
to DQ
4
: 1V/bit,
DQ
3
to DQ
0
: 100 mV/bit
V
PP
Min voltage (00h = no V
pp
pin)
1Dh
0000h
1Eh
1Fh
0000h
0007h
V
PP
Max voltage (00h =no V
pp
pin)
Typical timeout per single write 2
N
μ
s
Typical timeout for Min size buffer write 2
N
μ
s
Typical timeout per individual sector erase 2
N
ms
20h
21h
0007h
000Ah
22h
23h
0000h
0001h
Typical timeout for full chip erase 2
N
ms
Max timeout for write 2
N
times typical
24h
25h
0005h
0004h
Max timeout for buffer write 2
N
times typical
Max timeout per individual sector erase 2
N
times typical
26h
27h
0000h
0018h
Max timeout for full chip erase 2
N
times typical
Device Size = 2
N
byte
28h
29h
2Ah
2Bh
0002h
0000h
0005h
0000h
Flash Device Interface description
02h :
×
8/
×
16
Max number of byte in multi-byte write = 2
N
2Ch
2Dh
2Eh
2Fh
30h
0002h
007Fh
0000h
0020h
0000h
Number of Erase Block Regions within device (02h = Boot)
Erase Block Region 1 Information
31h
32h
33h
34h
003Eh
0000h
0000h
0001h
Erase Block Region 2 Information
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