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參數(shù)資料
| 型號： | MBM29DL162TE-70TR |
| 廠商： | FUJITSU LTD |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁數(shù)： | 25/76頁 |
| 文件大?。?/td> | 1145K |
| 代理商： | MBM29DL162TE-70TR |
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MBM29DL16XTE/BE70/90
31
s COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Some commands are required Bank Address (BA) input. When command sequences are inputed
to bank being read, the commands have priority than reading. “MBM29DL16XTE/BE Command Definitions
Table” in sDEVICE BUS OPERATION defines the valid register command sequences. Note that the Erase
Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in
progress. Moreover both Read/Reset commands are functionally equivalent, resetting the device to the read
mode. Please note that commands are always written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ5 = 1) to Read/Reset mode, the Read/
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to “2. AC
Characteristics
Read Only Operations Characteristics” in sELECTRICAL CHARACTERISTICS and sTIMING
DIAGRAM.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read
cycle from address (BA)01h for
×16((BA)02h for ×8) returns the device code (MBM29DL161TE = 36h and
MBM29DL161BE = 39h for
×8 mode; MBM29DL161TE = 2236h and MBM29DL161BE = 2239h for ×16 mode),
(MBM29DL162TE = 2Dh and MBM29DL162BE = 2Eh for
×8 mode; MBM29DL162TE = 222Dh and
MBM29DL162BE = 222Eh for
×16 mode), (MBM29DL163TE = 28h and MBM29DL163BE = 2Bh for ×8 mode;
MBM29DL163TE = 2228h and MBM29DL163BE = 222Bh for
×16 mode), (MBM29DL164TE = 33h and
MBM29DL164BE = 35h for
×8 mode; MBM29DL164TE = 2233h and MBM29DL164BE = 2235h for ×16 mode).
(See “MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect
Code Tables” in sDEVICE BUS OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address (BA)02h for
×16 ((BA)04h for ×8). Scanning the sector group
addresses (A19, A18, A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical “1” at device
output DQ0 for a protected sector group. The programming verification should be performed by verify sector
group protection on the protected sector. (See “MBM29DL16XTE/BE User Bus Operations Tables (BYTE = VIH
and BYTE = VIL)” in sDEVICE BUS OPERATION.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL161BE-90PBT | 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| MBM29DL163TD12PBT | 1M X 16 FLASH 3V PROM, 120 ns, PBGA48 |
| MBM29DL32TF70TN | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MBM29F800TA-70PFTN-E1 | 512K X 16 FLASH 5V PROM, 70 ns, PDSO48 |
| MBR-2051-1B5T | 51 CONTACT(S), MALE, D MICROMINIATURE CONNECTOR, SOLDER, PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL162TE-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TE-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TE-90TN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TE-90TR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL163BD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation |
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