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參數(shù)資料
| 型號： | MBC13900 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 10/26頁 |
| 文件大?。?/td> | 813K |
| 代理商： | MBC13900 |
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10
MBC13900 Technical Data
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
Applications Information
3 Applications Information
A flexible applications board topology has been developed to demonstrate the performance of the
MBC13900 at 900 and 1900 MHz. The designs are a compromise of the competing performance
requirements of gain, noise figure, input third-order intercept point (IIP3) and return losses. PCB, samples
and assembly information are available from Motorola under part number KITMBC13900/D.
3.1 900 MHz LNA
Figure 18 shows the schematic and Figure 19 shows the component placement for a 900 MHz LNA. The
design goals for the circuit are:
NF < 1.2 dB
Gain > 19 dB
Return Loss > 10 dB, input and output
Unconditional stability from 100 MHz to 6 GHz.
Typical performance that can be expected from this circuit at 3.0 and 3.5 V V
CC
is listed in Table 4. The
component values can be changed to enhance the performance of a particular parameter but usually at the
expense of another. Gain can be improved by sacrificing stability (R3 and R5). Input return loss can be
sacrificed to improve noise figure. IIP3 can be improved by increasing emitter degeneration (L3) and bias
current (R2). Unused traces are available on the PCB to add emitter degeneration at leads 1 and 3 of the
device.
Figure 18. 900 MHz LNA Schematic
C3
L1
R4
R3
C2
C4
V
CC
C1
R1
R2
RF In
RF Out
R5
L2
L4
C
7
F
Freescale Semiconductor, Inc.
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBC13900/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:兩極晶體管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13916 | 制造商:Freescale Semiconductor 功能描述:GAIN BLOCK 制造商:Freescale 功能描述:RF Amp Chip Single GP 2.5GHz 5V 4-Pin(3+Tab) SOT-343R |
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