參數(shù)資料
型號(hào)： MB84VP24491HK
廠商： Fujitsu Limited
英文描述： 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
中文描述： 128M的（x16）的快閃記憶體32M的（x16）的移動(dòng)FCRAMTM
文件頁(yè)數(shù)： 8/70頁(yè)
文件大小： 1272K
代理商： MB84VP24491HK
MB84VP24491HK
-70
7
I
DEVICE BUS OPERATIONS
Legend: L = V
IL
, H = V
IH
, X can be either V
IL
or V
IH
, High-Z = High Impedance.
See
I
DC CHARACTERISTICS for voltage levels.
*1 : Other operations except for indicated this column are inhibited.
*2 : Do not apply for two or more states of the following conditions at the same time;
CE0f = V
IL
CE1f = V
IL
CE1r = V
IL
and CE2r = V
IH
*3 : Should not be kept FCRAM Output Disable condition longer than 1
μ
s.
*4 : WE can be V
IL
if OE is V
IL
, OE at V
IH
initiates the write operations.
*5 : It is also used for the extended sector group protections.
*6 : FCRAM Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
Data retention depends on the selection of Power Down Program. Please refer to “Power Down Program”
in FCRAM Characteristics part.
*7 : OE can be V
IL
during Write operation if the following conditions are satisfied;
1) Write pulse is initiated by CE1r (refer to CE1r Controlled Write timing), or cycle time of the previous
operation cycle is satisfied.
2) OE stays V
IL
during Write cycle.
*8 : Can be either V
IL
or V
IH
but must be valid before Read or Write.
*9 : Protect “outer most” 2x8K bytes (4 words) on both ends of the boot block sectors.
Operation*
1,
*
2
CE0f CE1f CE1r CE2r OE WE
LB
UB
A
21
to
A
0
DQ
7
to
DQ
0
DQ
to
DQ
8
RESET
WP/
ACC
*
9
Full Standby
H
H
H
H
X
X
X
X
X
High-Z
High-Z
H
X
Output Disable*
3
H
H
L
H
H
H
X
X
X*
8
High-Z
High-Z
H
X
L
H
H
X
H
L
H
Read from Flash*
4
L
H
H
H
L
H
X
X
Valid
D
OUT
D
OUT
H
X
H
L
Write to Flash
L
H
H
H
H
L
X
X
Valid
D
IN
D
IN
H
X
H
L
H
H
H
L
X
X
Valid
D
IN
D
IN
H
X
Read from FCRAM
H
H
L
H
L
H
L
L
Valid
D
IN
D
IN
H
X
H
L
High-Z
D
IN
L
H
D
IN
High-Z
FCRAM No Read
H
H
L
H
L
H
H
H
Valid
High-Z
High-Z
H
X
Write to FCRAM
H
H
L
H
H*
7
L
L
L
Valid
D
IN
D
IN
H
X
H
L
High-Z
D
IN
L
H
D
IN
High-Z
FCRAM No Write
H
H
L
H
H*
7
L
H
H
Valid
High-Z
High-Z
H
X
Flash Temporary Sector
Group Unprotection*
5
X
X
X
X
X
X
X
X
X
X
X
V
ID
X
Flash Hardware Reset
X
X
H
H
X
X
X
X
X
High-Z
High-Z
L
X
Flash Boot Block Sector Write
Protection
X
X
X
X
X
X
X
X
X
X
X
X
L
FCRAM Power Down*
6
X
X
X
L
X
X
X
X
X
X
X
X
X
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