參數(shù)資料
型號： MB84VP24491HK
廠商： Fujitsu Limited
英文描述： 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
中文描述： 128M的（x16）的快閃記憶體32M的（x16）的移動FCRAMTM
文件頁數(shù)： 10/70頁
文件大小： 1272K
代理商： MB84VP24491HK
MB84VP24491HK
-70
9
I
DC CHARACTERISTICS
(Continued)
Parameter
Sym-
bol
Conditions
Value
Unit
Min
Typ
Max
Input Leakage Current
I
LI
V
IN
= V
SS
to V
CC
f, V
CC
r
–1.0
—
+1.0
μ
A
μ
A
Output Leakage Current
I
LO
V
OUT
= V
SS
to V
CC
f, V
CC
r, Output Disable
–1.0
—
+1.0
RESET Inputs Leakage
Current (Flash)
I
LIT
V
CC
f
= V
CC
f Max, RESET = 12.5 V
—
—
35
μA
WP/ACC Acceleration
Program Current (Flash)
I
LIA
V
CC
f = V
CC
f Max, WP/ACC = V
ACC
Max
—
—
20
mA
Flash V
CC
Active Current
(Read) *
1
I
CC1
f
CE (CE0f or CE1f) = V
IL
,
OE= V
IH
f = 10 MHz
—
—
45
mA
CE (CE0f or CE1f) = V
IL
,
OE= V
IH
f = 5 MHz
—
—
25
mA
Flash V
CC
Active Current *
2
I
CC2
f
CE (CE0f or CE1f) = V
IL
, OEf= V
IH
V
CC
f = V
CC
f Max,CE0f, CE1f = V
CC
f
±
0.3 V
RESET= V
CC
f
±
0.3 V, WP/ACC =V
CC
f
±
0.3 V
—
—
25
mA
Flash V
CC
Current (Standby)
I
SB1
f
—
1
5
μA
Flash V
CC
Current
(Standby, Reset)
I
SB2
f
V
CC
f = V
CC
f Max, RESET= V
SS
±
0.3 V
—
1
5
μA
Flash V
CC
Current
(Automatic Sleep Mode) *
3
I
SB3
f
V
CC
f = V
CC
f Max, CE0f, CE1f= V
SS
±
0.3 V,
RESET= V
CC
f
±
0.3 V,
V
IN
= V
CC
f
±
0.3 V or V
SS
f
±
0.3 V
—
1
5
μA
Flash V
CC
Active Current
(Read-while-Program) *
5
I
CC3
f
CE (CE0f or CE1f) = V
IL
, OE= V
IH
—
—
45
mA
Flash V
CC
Active Current
(Read-while-Erase) *
5
I
CC4
f
CE (CE0f or CE1f) = V
IL
, OE= V
IH
—
—
45
mA
Flash V
CC
Active Current
(Erase Suspend Program)
I
CC5
f
CE (CE0f or CE1f) = V
IL
, OE= V
IH
—
—
25
mA
Flash V
CC
Active Current
(Page Mode Read)
I
CC6
f
CE (CE0f or CE1f)
=
V
IL
, OE
=
V
IH
,
8 Word Read
—
—
10
mA
FCRAM V
CC
Active Current *
8
I
CC1
r
V
CC
r = V
CC
r Max,
CE1r = V
IL
, CE2r = V
IH,
V
IN
= V
IH
or V
IL
, I
OUT
= 0mA*
7
t
RC
/ t
WC
=Min
—
—
30
mA
I
CC2
r
t
RC
/ t
WC
=1
μ
s
—
—
3
FCRAM V
CC
Page Read
Current *
8
I
CC3
r
V
CC
r = V
CC
r Max, V
IN
= V
IH
or V
IL
,
CE1r = V
IL
, CE2r = V
IH,
I
OUT
= 0 mA *
7
,
t
PRC
=Min
—
—
10
mA
FCRAM V
CC
Standby
Current *
8
I
SB1
r
V
CC
r = V
CC
r Max, V
IN
< 0.2V or > V
CC
r – 0.2V
CE1r > V
CC
r – 0.2V, CE2r > V
CC
r– 0.2V
—
—
100
μ
A
FCRAM V
CC
Power Down
Current *
8
I
DDPS
r
V
CC
r = V
CC
r Max,
CE2r < 0.2V,
V
IN
= V
IH
or V
IL
Sleep
—
—
10
μ
A
μ
A
μ
A
μ
A
I
DDP4
r
4M Partial
—
—
45
I
DDP8
r
8M Partial
—
—
55
I
DDP16
r
16M Partial
—
—
70
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