參數(shù)資料
型號: MB84VA2102-10
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數(shù): 26/29頁
文件大?。?/td> 422K
代理商: MB84VA2102-10
26
MB84VA2102
-10
/MB84VA2103
-10
I
ERASE AND PROGRAMMING PERFORMANCE
(Flash)
I
DATA RETENTION CHARACTERISTICS
(SRAM)
* : 5
μ
A (Max.) at T
A
= –20°C to +40°C
CE1s Controlled Data Retention Mode (Note 1)
Parameter
Limits
Unit
Comment
Min.
Typ.
Max.
Sector Erase Time
1
15
sec
Excludes programming time
prior to erasure
Programming Time
16
5,200
μ
s
Excludes system-level
overhead
Chip Programming Time
16.8
100
sec
Excludes system-level
overhead
Erase/Program Cycle
100,000
cycles
Parameter
Symbol
Parameter Description
Min.
Typ.
Max.
Unit
V
DH
Data Retention Supply Voltage
2.0
3.6
V
I
DDS2
Standby Current
V
DH
= 3.0 V
50*
μ
A
V
DH
= 3.6 V
60
μ
A
t
CDR
Chip Deselect to Data Retention Mode Time
0
ns
t
R
Recovery Time
5
ms
V
CC
s
2.7 V
V
IH
GND
DATA RETENTION MODE
See Note 2
t
CDR
CE1s
V
CCS
–0.2 V
See Note 2
t
R
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