參數(shù)資料
型號(hào)： MB84VA2103-10
廠商： FUJITSU LTD
元件分類： 存儲(chǔ)器
英文描述： 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA48
封裝： PLASTIC, FBGA-48
文件頁數(shù)： 1/29頁
文件大?。?/td> 422K
代理商： MB84VA2103-10
DS05-50104-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (
×
16) FLASH MEMORY &
2M (
×
8) STATIC RAM
MB84VA2102
-10
/MB84VA2103
-10
I
FEATURES
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–20 to +85
°
C
— FLASH MEMORY
Minimum 100,000 write/erase cycles
Sector erase architecture
One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VA2102: Top sector
MB84VA2103: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Please refer to "MBM29LV160T/B" data sheet in detailed function
— SRAM
Power dissipation
Operating: 35 mA max.
Standby : 50
μ
A max.
Power down features using CE1s and CE2s
Data retention supply voltage: 2.0 V to 3.6 V
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
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