參數資料
型號: MB81ES653225
廠商: Fujitsu Limited
英文描述: Consumer/Embedded Application Specific Memory for SiP
中文描述: 消費/嵌入式SIP應用程序特定的內存
文件頁數: 34/44頁
文件大?。?/td> 485K
代理商: MB81ES653225
MB81ES653225-12/-12L
34
TIMING DIAGRAMS
1.
CLOCK ENABLE-READ AND WRITE SUSPEND (@ BL
=
4)
2.
POWER DOWN ENTRY AND EXIT
I
CKE
(1 clock)
l
CKE
(1 clock)
CLK
(NO CHANGE)
NOT
WRITTEN
NOT
WRITTEN
(NO CHANGE)
CKE
CLK
(Internal)
DQ
31
to DQ
0
(Read)
DQ
31
to DQ
0
(Write)
D1
D2
D3
D4
Q1
Q2
Q3
Q4
1
1
2
2
3
3
*1 : The latency of CKE (l
CKE
) is one clock.
*2 : During read mode, burst counter will not be incremented/decremented at the next clock of CSUS command.
Output data remain the same data.
*3 : During the write mode, data at the next clock of CSUS command is ignored.
CLK
CKE
Command
NOP
PD (NOP)
2
NOP
t
CKSP
(Min)
t
REF
(Max)
1clock (Min)
PDX
H or L
ACTV
4
3
1
*1 : Precharge command (PRE or PALL) should be asserted if any bank is active and in the burst mode.
*2 : Precharge command can be posted in conjunction with CKE after the last read data have been appeared
on DQ.
*3 : It is recommended to apply NOP command in conjunction with CKE.
*4 : The ACTV command can be latched after t
CKSP
(Min)
+
1 clock (Min) .
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