參數(shù)資料
型號: MB81ES653225
廠商: Fujitsu Limited
英文描述: Consumer/Embedded Application Specific Memory for SiP
中文描述: 消費(fèi)/嵌入式SIP應(yīng)用程序特定的內(nèi)存
文件頁數(shù): 26/44頁
文件大小: 485K
代理商: MB81ES653225
MB81ES653225-12/-12L
26
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) *
1,
*
2,
*
3
(Continued)
Parameter
Symbol
Condition
Value
Unit
Min
Max
0.2
Output High Voltage
V
OH (DC)
I
OH
=
0.1 mA
V
OL (DC)
I
OL
=
0.1 mA
0 V
V
IN
V
DDQ
;
All other pins not under test
=
0 V
0 V
V
IN
V
DDQ
;
Data out disabled
Burst Length
=
1
t
RC
=
Min, t
CK
=
Min
One bank active
V
DDQ
0.2
V
Output Low Voltage
V
Input Leakage
Current
I
LI
5
5
μ
A
Output Leakage
Current
I
LO
5
5
μ
A
Operating Current
(Average Power
Supply Current)
I
DD1
128 page length
50
mA
Output pin open
Address changed up to
1 time during
64 page length
40
t
RC
(Min)
0 V
V
IN
V
IL
Max
V
IH
Min
V
IN
V
DD
CKE
=
V
IL
All banks idle t
CK
=
Min
Power down mode
0 V
V
IN
V
IL
Max
V
IH
Min
V
IN
V
DD
32 page length
35
Precharge
Standby Current
(Power Supply
Current)
-12
I
DD2P
1
mA
-12L
0.4
-12
I
DD2PS
CKE
=
V
IL
All banks idle
CLK
=
V
IH
or V
IL
Power down mode
0 V
V
IN
V
IL
Max
V
IH
Min
V
IN
V
DD
CKE
=
V
IH
All banks idle, t
CK
=
20 ns
NOP commands only,
Input signals (except for CMD) are changed
1 time during 2 clocks.
0 V
V
IN
V
IL
Max
V
IH
Min
V
IN
V
DD
CKE
=
V
IH
All banks idle
CLK
=
V
IH
or V
IL
Input signal are stable.
0 V
V
IN
V
IL
Max
V
IH
Min
V
IN
V
DD
0.5
mA
-12L
0.1
I
DD2N
8
mA
I
DD2NS
1
mA
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