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參數(shù)資料
| 型號： | MA5114 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 1024x4 Bit Static RAM |
| 中文描述： | 輻射硬1024x4位靜態(tài)RAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MA5114 |
MA5114
3/12
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Transition is measured at
±
500mV from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
= -55
°
C to +125
°
C with V
DD
= 5V
±
10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25
°
C with V
DD
= 5V
±
10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol
Parameter
Min
Max
Units
T
AVAVR
T
AVQV
T
ELQV
T
ELQX
(3,4)
T
ELQZ
(3,4)
T
AXQX
Read Cycle Time
135
-
ns
Address Access Time
-
135
ns
Chip Select to Output Valid
-
135
ns
Chip Select to Output Active
10
-
ns
Chip Select to Output Tri State
10
50
ns
Output Hold from Address Change
10
-
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
Parameter
Min
Max
Units
T
AVAVW
T
AVWL
T
WLWH
T
WHAV
T
DVWH
T
NHDX
T
WLQZ
(3,4)
T
ELWL
T
ELWH
T
AVWH
T
WHQX
(3,4)
Write Cycle Tlme
135
-
ns
Address Set Up Time
10
-
ns
Write Pulse Width
50
-
ns
Write Recovery Time
5
-
ns
Data Set Up Time
35
-
ns
Data Hold Time
5
-
ns
Write Enable to Output Tri State
10
50
ns
Chip Selection to Write Low
25
-
ns
Chip Selection to End of Write
85
-
ns
Address Valid to End of Write
80
-
ns
Output Active from End to Write
5
-
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
C
IN
C
OUT
Input Capacitance
V
l
= 0V
V
O
= 0V
-
6
10
pF
Output Capacitance
-
8
12
pF
Note: T
A
= 25
°
C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
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