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參數(shù)資料
| 型號： | MA5114 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 1024x4 Bit Static RAM |
| 中文描述： | 輻射硬1024x4位靜態(tài)RAM |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MA5114 |
MA5114
2/12
Symbol
Parameter
Min.
Max.
Units
V
CC
Supply Voltage
-0.5
7
V
V
I
Input Voltage
-0.3
V
DD
+0.3
V
T
A
Operating Temperature
-55
125
°
C
T
S
Storage Temperature
-65
150
°
C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55
°
C to +125
°
C with V
DD
= 5V
±
10% and to post 100k Rad(Si) total dose
radiation at T
A
= 25
°
C with V
DD
= 5V
±
10% (characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125
°
C, guaranteed but not tested at T
A
= -55
°
C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
V
DD
Supply voltage
-
4.5
5.0
5.5
V
V
lH
Input High Voltage
-
V
DD
/2
-
V
DD
V
V
lL
Input Low Voltage
-
V
SS
-
0.8
V
V
OH
Output High Voltage
I
OH1
= -1mA
2.4
-
-
V
V
OL
Output Low Voltage
I
OL
= 2mA
-
-
0.4
V
I
LI
Input Leakage Current (note 2)
All inputs except
CS
-
-
±
10
μ
A
I
LO
Output Leakage Current (note 2)
Output disabled, V
OUT
= V
SS
or V
DD
-
-
±
20
μ
A
I
PUI
Input Pull-Up Current
V
IN
= V
SS
on
CS
input only
-
-
-100
μ
A
I
PDI
Input Leakage Current
V
IN
= V
SS
on
CS
input only
-
-
5
μ
A
I
DD
Power Supply Current
f
RC
= 1MHz,
CS
= 50% mark:space-
12
16
mA
I
SB1
Selected Supply Current
CS
= V
SS
-
25
35
mA
I
SB2
Standby Supply Current
Chip disabled
-
50
3000
μ
A
Figure 4: Electrical Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
V
DR
V
CC
for Data Retention
CS
= V
DR
2.0
-
-
V
I
DDR
Data Retention Current
CS
= V
DR
, V
DR
= 2.0V
-
30
2000
μ
A
Figure 5: Data Retention Characteristics
CHARACTERISTICS AND RATINGS
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