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參數(shù)資料
| 型號(hào)： | MA5114 |
| 廠(chǎng)商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard 1024x4 Bit Static RAM |
| 中文描述： | 輻射硬1024x4位靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | MA5114 |
MA5114
11/12
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Ion LET (MeV.cm
2
/mg)
UPSET BIT
CROSS-SECTION
(cm
2
/bit)
Figure 18: Typical Per-Bit Upset Cross-Section vs Ion LET
SINGLE EVENT UPSET CHARACTERISTICS
Total Dose (Function to specification)*
1x10
5
Rad(Si)
Transient Upset (Stored data loss)
5x10
10
Rad(Si)/sec
Transient Upset (Survivability)
>1x10
12
Rad(Si)/sec
Neutron Hardness (Function to specification)
>1x10
15
n/cm
2
Single Event Upset**
3.4x10
-9
Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 17: Radiation Hardness Parameters
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