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參數(shù)資料
| 型號(hào)： | M6MGT160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁(yè)數(shù)： | 7/30頁(yè) |
| 文件大?。?/td> | 258K |
| 代理商： | M6MGT160S2BVP |
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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
7
1) X at
F
-
RY/BY# is V
OL
or V
OH(Hi-Z)
.
*The F-RY/BY# is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the F-RY/BY# signal to transition high indicating a Ready WSM condition.
2) X can be V
IH
or V
IL
for control pins.
BUS OPERATIONS
Bus Operations for Word-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
F-CE#
OE#
WE#
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
F-RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
F-RY/BY#
V
OH (Hi-Z)
X
X
V
OH (Hi-Z)
X
X
X
X
X
X
Hi-Z
DQ
0-15
2)
V
OH (Hi-Z)
Bus Operations for Byte-Wide Mode
1)
Mode
Array
Status Register
Lock Bit Status
Identifier Code
Stand by
Program
Erase
Others
Write
Read
Pins
F-CE#
OE#
WE#
DQ
0-7
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
X
V
IH
V
IH
V
IH
X
V
IH
V
IH
V
IH
V
IH
V
IH
X
V
IL
V
IL
V
IL
X
Data out
Status Register Data
Lock Bit Data (DQ
6
)
Identifier Code
Hi-Z
Hi-Z
Command/Data in
Command
Command
Output disable
Deep Power Down
F-RP#
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
F-RY/BY#
X
X
X
X
X
X
X
X
Hi-Z
2)
V
OH (Hi-Z)
V
OH (Hi-Z)
V
OH (Hi-Z)
相關(guān)PDF資料 |
PDF描述 |
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| M6MGB160S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGT166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M6MGT166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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