- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384645 > M6MGT160S2BVP (Mitsubishi Electric Corporation) CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP PDF資料下載
參數(shù)資料
| 型號(hào)： | M6MGT160S2BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁數(shù)： | 13/30頁 |
| 文件大?。?/td> | 258K |
| 代理商： | M6MGT160S2BVP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S2BVP
13
3.3V
GND
F-V
CC
Vcc POWER UP / DOWN TIMING
V
IH
V
IL
F-RP#
Read /Write Inhibit
t
VCS
V
IH
V
IL
F-CE#
V
IH
V
IL
WE#
t
PS
t
PS
Read /Write Inhibit
Read /Write Inhibit
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0V, V
IH
= 3.0V
Input rise and fall times :
￡
5ns
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate +
CL(30pF)
or
AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
F-CE#
OE#
WE#
DATA
ADDRESS VALID
t
OH
t
OLZ
t
a (CE)
t
OEH
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
DUT
3.3k
W
1N914
1.3V
C
L
=30pF
V
IH
V
IL
F-RP#
t
PS
t
DF(CE)
t
PHZ
*: When BYTE#=V
IL
, A
-1
must be applied.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M6MGB160S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB160S4BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGB162S2BVP | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
| M6MGT166S2BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
| M6MGT166S4BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。