參數(shù)資料
型號(hào): M6MGB160S4BVP
廠商: Mitsubishi Electric Corporation
英文描述: CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述: 3.3的CMOS只快閃記憶體
文件頁(yè)數(shù): 28/30頁(yè)
文件大?。?/td> 257K
代理商: M6MGB160S4BVP
MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
(4)TIMING DIAGRAMS
t
a
(A)
t
v
(A)
t
a
(OE)
t
en
(OE)
t
dis
(OE)
t
CR
t
en
(CE)
WE# = "H" level
OE#
Read cycle
A
0~17
(Word Mode)
A
-1~17
(Byte Mode)
(Note3)
(Note3)
VALID DATA
t
a
(CE)
t
dis
(CE)
S-CE
(Note3)
(Note3)
DQ
0~15
(Word Mode)
0~7
(Byte Mode)
t
CW
Write cycle( WE# control mode )
A
0~17
(Word Mode)
A
-1~17
(Byte Mode)
t
en
(W)
t
h
(D)
t
su
(D)
t
en
(OE)
t
dis
(OE)
t
w
(W)
t
rec
(W)
t
su
(A)
t
dis
(W)
OE#
WE#
DATA IN
STABLE
t
su
(A-WH)
S-CE
(Note3)
(Note3)
t
su
(CE)
DQ
0~15
(Word Mode)
DQ
0~7
(Byte Mode)
28
相關(guān)PDF資料
PDF描述
M6MGT162S2BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB162S2BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGT162S4BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB162S4BVP CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGT166S4BWG Series RC1083 rocker switches rated to 15 amp and snap-in panel mount
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M6MGB162S2BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB162S4BVP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
M6MGB166S2BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB166S4BWG 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
M6MGB331S4BKT 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B