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| 型號(hào)： | M6MGB160S4BVP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| 中文描述： | 3.3的CMOS只快閃記憶體 |
| 文件頁(yè)數(shù)： | 11/30頁(yè) |
| 文件大?。?/td> | 257K |
| 代理商： | M6MGB160S4BVP |
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MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
11
Read-Only Mode
AC ELECTRICAL CHARACTERISTICS
(Ta = -20 ~85
°
C)
AC ELECTRICAL CHARACTERISTICS
(Ta = -20 ~85
°
C)
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at F-Vcc=3.3V, Ta=25
°
C
Timing measurements are made under AC waveforms for read operations.
Symbol
Parameter
t
a (AD)
t
a (CE)
t
a (OE)
Address access time
Chip enable access time
Output enable access time
t
AVQV
t
ELQV
t
GLQV
t
CLZ
t
DF(CE)
t
OLZ
t
DF(OE)
t
PHZ
t
a(BYTE)
t
BHZ
Chip enable to output in low-Z
Chip enable high to output in high Z
Output enable to output in low-Z
Output enable high to output in high Z
F-RP# low to output high-Z
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
PLQZ
t
FL/HQV
t
FLQZ
t
RC
Read cycle time
t
AVAV
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
90
90
30
0
25
90
0
25
150
90
25
Max
Min
Typ
Limits
Speed Item: -90
F-Vcc=2.7~3.6V
t
WHGL
OE# hold from WE# high
t
OEH
t
BAD
t
AVFL/H
F-RP# recovery to F-CE# low
ns
ns
ns
t
PS
t
PHEL
10
0
150
t
ELFL/H
F-CE# low to BYTE# high or low
Address to BYTE# high or low
t
BCD
t
OH
Output hold from F-CE#, OE#, addresses
t
OH
5
5
BYTE# access time
BYTE# low to output high-Z
ns
Write Mode
(WE# control)
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
OE# hold from WE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
t
AVAV
t
AVWH
t
WHDX
t
WHGL
-
t
DVWH
t
WHAX
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
Write pulse width
Write pulse width high
Byte enable high or low set-up time
Byte enable high or low hold time
Chip enable hold time
Chip enable set-up time
F-RP# high recovery to write enable low
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
WE# high to RY/BY# low
Block Lock set-up to write enable high
t
WLWH
t
WHWL
t
FL/HWH
t
WHFL/H
t
WHEH
t
ELWL
t
PHWL
t
QVPH
t
WHRH1
t
WHRH2
t
WHRL
t
PHHWH
t
WP
t
WPH
t
BS
t
BH
t
CH
t
CS
t
PS
t
BLS
t
BLH
t
DAP
t
DAE
t
WHRL
OE# hold to WE# Low
t
GHWL
t
GHWL
Limits
Unit
ns
ns
ns
ns
ns
ns
ns
90
50
0
50
0
10
30
Max
Min
Typ
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
150
4
40
80
600
90
60
30
50
90
0
0
0
90
ns
0
Speed Item: -90
F-Vcc=2.7~3.6V
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