參數(shù)資料
型號: M6MGB160S4BVP
廠商: Mitsubishi Electric Corporation
英文描述: CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
中文描述: 3.3的CMOS只快閃記憶體
文件頁數(shù): 17/30頁
文件大?。?/td> 257K
代理商: M6MGB160S4BVP
MITSUBISHI LSIs
Sep. 1999 , Rev.2.0
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T160S4BVP
17
AC WAVEFORMS FOR ERASE OPERATIONS (WE# control
)
20H
D0H
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
F-RY/BY#
t
AH
V
IH
V
OH
V
OL
V
IH
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
t
WHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
F-CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
F-RP#
F-WP#
BANK ADDRESS
VALID
BYTE#
V
IL
t
BS
t
BH
t
BLH
t
BLS
AC WAVEFORMS FOR ERASE OPERATIONS (F-CE# control)
20H
D0H
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
F-RY/BY#
t
AH
V
IH
V
OH
V
OL
V
IL
ADDRESSES
t
AS
FFH
SRD
t
OEH
t
DAE
t
EHRL
ADDRESS VALID
ERASE
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
F-CE#
OE#
WE#
DATA
t
a(OE)
t
a(CE)
BANK ADDRESS VALID
V
IL
V
IH
V
IL
V
IH
t
PS
F-RP#
F-WP#
BANK ADDRESS
VALID
V
IH
BYTE#
V
IL
t
BH
t
BLH
t
BS
t
BLS
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