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參數(shù)資料
| 型號： | M5M5V216ATP-55HI |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | 0.400 INCH, TSOP2-44 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 156K |
| 代理商： | M5M5V216ATP-55HI |
M5M5V216ATP,RT
revision-03, 14.Jan.'03
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PIN CONFIGURATION
DESCRIPTION
Single +2.7~+3.6V power supply
Small stand-by current: 0.3A(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage=2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S , BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology: 0.25m CMOS
Package: 44 pin 400mil TSOP (II)
FEATURES
1
The M5M5V216A is a f amily of low v oltage 2-Mbit static RAMs
organized as 131,072-words by 16-bit, f abricated by
Mitsubishi's
high-perf ormance 0.25m CMOS technology.
The M5M5V216A is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V216ATP, RT are packaged in a 44-pin 400mil thin small
outline package. M5M5V216ATP (normal lead bend ty pe package)
, M5M5V216ART (rev erse lead bend ty pe package) , both ty pes
are v ery easy t o design a printed circuit board.
PART NAME TABLE
* "ty pical" parameter is sampled, not 100% tested.
Outline: TP :
44P3W - H
RT : 44P3W - J
NC: No Connection
A0 ~ A16
DQ1 ~ DQ16
S
W
OE
BC1
Address input
Data input / output
Chip select input
Write control input
Output inable input
Lower By te (DQ1 ~ 8)
Pin
Function
Vcc
GND
Power supply
Ground supply
BC2
Upper By te(DQ9 ~ 16)
BC1
OE
A4
A3
BC2
S
A5
DQ1
NC
Vcc
GND
WE
NC
A8
A9
A10
A11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A2
A1
A0
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A16
A15
A14
A13
A12
DQ9
DQ10
DQ11
DQ12
Vcc
GND
DQ13
DQ14
DQ15
DQ16
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
S
DQ1
Vcc
GND
WE
A2
A1
A0
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
A16
A15
A14
A13
A12
BC1
OE
BC2
A5
NC
A8
A9
A10
A11
DQ9
DQ10
DQ11
DQ12
Vcc
GND
DQ13
DQ14
DQ15
DQ16
A6
A7
0.3A 1A
1A
3A
M5M5V216ATP,RT -70HI
M5M5V216ATP,RT -55HI
ty pical *
70°C
85°C
25°C
40°C
24A
2.7 ~ 3.6V
70ns
55ns
-40 ~ +85°C
I-version
8A
45mA
(10MHz)
5mA
(1MHz)
Version,
Part name
Power
Supply
Access
time
max.
Stand-by c urrent Icc(PD), Vcc=3.0V
Ratings (max.)
Operating
temperature
Active
(3.0V, ty p.)
Icc1
current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V216ATP-55HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5V216ATP-70HI | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V216AWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V216AWG-55H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V216AWG-55HI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM |
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