- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄180233 > M5M5V416CWG-70HI 256K X 16 STANDARD SRAM, 70 ns, PBGA48 PDF資料下載
參數(shù)資料
| 型號： | M5M5V416CWG-70HI |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 70 ns, PBGA48 |
| 封裝： | 7 X 8.50 MM, 0.75 MM PITCH, CSP-48 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 265K |
| 代理商： | M5M5V416CWG-70HI |
M5M5V416CWG -55HI, -70HI
2003.08.21
Ver. 7.0
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
RENESAS LSIs
* Typical parameter indicates the value for the center
of distribution, and not 100% tested.
1
DESCRIPTION
The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs
organized as 262144-words by 16-bit, f abricated by Renesas's
high-perf ormance 0.18m CMOS technology.
The M5M5V416C is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416CWG is packaged in a CSP (chip scale package),
with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It giv es the best solution f or
a compaction of m ounting area as well as f lexibility of wiring
pattern of printed circuit boards.
FEATURES
- Single 2.7~3.6V power supply
- Small stand-by current: 0.2A (3.00V, ty p.)
- No clocks, No ref resh
- Data retention supply v oltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1#, S2, BC1# and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE# prev ents data contention in the I/O bus
- Process technology: 0.18m CMOS
- Package: 48ball 7.0mm x 8.5mm CSP
PIN CONFIGURATION
A0 ~ A17
DQ1 ~ DQ16
S1#
W#
OE#
BC1#
Address input
Data input / output
Chip select input 1
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Pin
Function
Vcc
GND
Power supply
Ground supply
BC2#
Upper By te (DQ9 ~ 16)
S2
Chip select input 2
(TOP VIEW)
Outline:
48FJA
NC: No Connection
1
2
3
4
5
6
A
B
C
D
E
F
G
DQ3
A7
DQ1
S2
VCC
GND
DQ6
A2
S1#
DQ2
DQ4
DQ5
DQ7
A1
A4
A6
A5
A17
A16
A15
A0
A3
NC or
GND
A14
OE#
BC2#
DQ15
DQ13
DQ12
DQ10
BC1#
DQ16
DQ14
GND
VCC
DQ11
DQ8
W#
A13
A12
N.C.
DQ9
N.C.
A11
A10
A9
A8
H
30mA
(10MHz)
5mA
(1MHz)
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by c urrent
(
A)
Ratings (max. @3.6V)
Active
current
(3.0V, ty p.)
Icc1
85°C
25°C
I-version
-40 ~ +85°C
M5M5V416CWG -55HI
2.7 ~ 3.6V
70ns
* Typical(3.0V)
40°C
25°C 40°C
20
2.5
1.5
0.4
0.2
N C
70°C
3.0V
3.3V
3.6V
Voltage
10
20
4.0
2.5
10
20
2.0
1.0
10
55ns
M5M5V416CWG -70HI
*Don't connect E3 ball to voltage level more than 0V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5R24TLJ800.0000MHZ | CRYSTAL OSCILLATOR, CLOCK, 800 MHz, LVDS OUTPUT |
| M5R28TPJ-R800.0000MHZ | CRYSTAL OSCILLATOR, CLOCK, 800 MHz, PECL OUTPUT |
| M5R75XQJ0.7500MHZ | CRYSTAL OSCILLATOR, CLOCK, 0.75 MHz, PECL OUTPUT |
| M5R18THJ-R0.7500MHZ | CRYSTAL OSCILLATOR, CLOCK, 0.75 MHz, LVDS OUTPUT |
| M5R13RHJ-R0.7500MHZ | CRYSTAL OSCILLATOR, CLOCK, 0.75 MHz, LVDS OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V416WG-70LI | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5V4R01J-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM |
| M5M5V4R01J-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM |
| M5M5V4R04J-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
| M5M5V4R04J-15 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。