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參數(shù)資料
| 型號(hào)： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 23/23頁 |
| 文件大小： | 200K |
| 代理商： | M5M29GB |
M
1
C
M
S
2
O
Page Program
Setup
Lock Bit Program
Setup
Block Erase
Setup
Setup State
Read/Standby State
OTHER
Erase &
Verify
Read
Status Register
B0H
D0H
B0H
D0H
50H
41H
77H
20H
A7H
Suspend State
Read Array
Read
Status Register
FFH
70H
70H
Read
Status Register
Read
Device Identifier
Read
Lock Status
FFH
70H
90H
70H
90H
FFH
FFH
71H
70H
71H
90H
Read Array
OTHER
OTHER
D0H
D0H
D0H
WDi
i=0-127
Erase All Unlocked
Blocks Setup
Program &
Verify
Read
Status Register
71H
Clear
Status Register
Ready
Read Array
(From The Other Bank)
Change Bank
Address
Change Bank
Address
Read State with BGO
40H
Byte Program
Setup
WD
0EH
D0H
Single Data Load
to Page Buffer
Setup
74H
WD
OTHER
Internal State
Page Buffer to Flash
Setup
Clear
Page Buffer
Setup
55H
D0H
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| M5M417400CJ-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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