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參數(shù)資料
| 型號： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 14/23頁 |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
14
AC WAVEFORMS FOR PAGE PROGRAM OPERATION
(WE#
control
)
AC WAVEFORMS FOR PAGE PROGRAM OPERATION
(CE#
control
)
41H
DIN
t
WPH
t
WP
t
DS
t
DH
t
CS
t
CH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESS VALID
CE#
OE#
WE#
DATA
t
AH
V
IH
V
IL
t
AS
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAP
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
FFH
7FH
01H~7EH
00H
t
a(CE)
t
a(OE)
V
IL
V
IH
V
IL
WP1#,
WP2#
t
BLH
t
BLS
t
PS
V
IH
RP#
BANK ADDRESS VALID
The other bank
address
VALID
VALID
VALID
DOUT
t
OEH
t
GHWL
t
a(OE)
t
a(CE)
A6~A0
A19~A7
DIN
t
CEPH
t
CEP
t
DS
t
DH
t
WS
t
WH
t
WC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESS VALID
CE#
OE#
WE#
DATA
t
AH
V
IH
V
IL
t
AS
DIN
SRD
DIN
V
IH
V
IL
t
OEH
t
DAP
PROGRAM
READ STATUS
REGISTER
WRITE READ
ARRAY COMMAND
FFH
7FH
01H~7EH
00H
t
a(CE)
t
a(OE)
BANK ADDRESS VALID
VALID
VALID
VALID
DOUT
t
a(CE)
t
OEH
t
GHEL
t
a(OE)
The other bank
address
A6~A0
A19~A7
t
PS
V
IH
V
IL
V
IH
RP#
V
IL
t
BLH
WP1#,
WP2#
t
BLS
41H
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| M5M417400CJ-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ-5S | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CJ | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
| M5M417400CTP-5 | FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29GB160BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BVP-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB160BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29GB161BWG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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