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參數(shù)資料
| 型號(hào)： | M5M29GB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 16,777,216位（1048,576字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁(yè)數(shù)： | 12/23頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | M5M29GB |
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MITSUBISHI LSIs
16,777,216-BIT (1048,576-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T161BWG
Sep.1999. Rev4.0
12
Erase and Program Performance
Block Erase Time
Main Block Write Time (Page Mode)
Page Write Time
Parameter
ms
sec
ms
Unit
Typ
4
1.0
40
Max
80
1.8
600
Min
Vcc Power Up / Down Timing
Symbol
Unit
Typ
2
Max
Min
t
VCS
Please see page 12.
Parameter
RP# =V
IH
set-up time from Vccmin
μ
s
During power up/down, by the noise pulses on control pins, the device has possibility of accidental erasure or programming.
The device must be protected against initiation of write cycle for memory contents during power up/down.
The delay time of min.2
μ
sec is always required before read operation or write operation is initiated from the time Vcc reaches Vccmin during power up/down.
By holding RP# VIL, the contents of memory is protected during Vcc power up/down.
During power up, RP# must be held VIL for min.2
μ
s from the time Vcc reaches Vccmin.
During power down, RP# must be held VIL until Vcc reaches GND.
RP# doesn't have latch mode ,therefore RP# must be held VIH during read operation or erase/program operation.
Program Suspend Latency / Erase Suspend Time
Program Suspend Latency
Erase Suspend Time
Parameter
Unit
Typ
Max
15
15
Min
μ
s
μ
s
Please see page 19.
Write Mode
(F-CE# control)
AC ELECTRICAL CHARACTERISTICS
(Ta = -40 ~ 85
°
C, Vcc = 2.7V ~ 3.6V)
Read timing parameters during command write operation mode are the same as during read-only operation mode.
Typical values at Vcc=3.3V, Ta=25
°
C
Symbol
Parameter
Write cycle time
Address set-up time
Data hold time
OE# hold from CE# high
Latency between Read and Write FFH or 71H
Data set-up time
Address hold time
t
AVAV
t
AVWH
t
EHDX
t
EHGL
-
t
DVWH
t
EHAX
t
WC
t
AS
t
DH
t
OEH
t
RE
t
DS
t
AH
Limits
90ns
Typ
90
50
0
50
0
10
30
Max
Min
Unit
ns
ns
ns
ns
ns
ns
ns
CE# pulse width
CE# pulse width high
OE# hold to CE# Low
Write enable hold time
Write enable set-up time
RP# high recovery to write enable low
Block Lockhold from valid SRD
Duration of auto-program operation
Duration of auto-block erase operation
CE# high to F-RY/BY# low
Block Lock set-up to chip enable high
t
ELEH
t
EHEL
t
GHEL
t
EHWH
t
WLEL
t
PHWL
t
QVPH
t
EHRH1
t
EHRH2
t
EHRL
t
PHHEH
t
EHRL
t
PS
t
CEP
t
CEPH
t
GHEL
t
WH
t
WS
t
BLS
t
BLH
t
DAP
t
DAE
150
4
40
90
80
600
60
30
90
0
0
0
90
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
Vcc=2.7-3.6V
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