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參數(shù)資料
| 型號： | M5M28F101AFP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS閃存 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | M5M28F101AFP |
MITSUBISHI LSIs
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
AUTO PROGRAM AND AUTO ERASE OPERATION
10
AUTO PROGRAM :
V
CC
= 5.0V, V
PP
= V
PPH
DATA POLLING
LAST ADDR
START
PROGRAMMING
COMPLETE
10H OR
50H
DIN
INPUT DATA
INCREMENT ADDR
NO
AUTO ERASE :
WRITE AUTO PROGRAM
SETUP COMMAND
WRITE AUTO PROGRAM
ADDRESS DATA
YES
V
CC
= 5.0V, V
PP
= V
PPH
STATUS POLLING
START
ERASURE
COMPLETE
30H
30H
INPUT DATA
WRITE AUTOERASE
SETUP COMMAND
WRITE AUTOERASE
COMMAND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FB800FP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M28F101J12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-15 | 制造商:Mitsubishi Electric 功能描述: |
| M5M29F25611VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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