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參數(shù)資料
| 型號(hào)： | M58MR064D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 40/52頁(yè) |
| 文件大?。?/td> | 399K |
| 代理商： | M58MR064D |
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M58MR064C, M58MR064D
Figure 20. Erase Suspend & Resume Flowchart and Pseudo Code
Write 70h
Command
AI90106
Read Status
Register
YES
NO
b7 = 1
YES
NO
b6 = 1
Erase Continues
PES instruction:
– write B0h command
do:
– read status register
(E or G must be toggled)
while b7 = 1
If b6 = 0, Erase completed
Write D0h
Command
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
Start
Write B0h
Command
Erase Complete
Write FFh
Command
Read Data
PER instruction:
– write D0h command to resume
erasure
– if the erase operation completed
then this is not necessary.
The device returns to Read Array as
normal (as if the Program/Erase
suspend was not issued).
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| M59DR032A100N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58MR064D100ZC6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064D120ZC6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064DZC | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR064-ZCT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58PR001LE | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories |
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