參數(shù)資料
型號: M58MR064D
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的x16插槽,復(fù)用的I / O,雙行,突發(fā)1.8V電源快閃記憶體
文件頁數(shù): 28/52頁
文件大?。?/td> 399K
代理商: M58MR064D
M58MR064C, M58MR064D
34/52
Table 28. Synchronous Burst Read AC Characteristics
(TA = –40 to 85°C; VDD =VDDQ = 1.65V to 2.0V)
Symbol
Alt
Parameter
Test Condition
M58MR064
Unit
100
120
Min
Max
Min
Max
tAVK
tAVCLKH
Address Valid to Clock
7
ns
tELK
tCELCLKH
Chip Enable Low to Clock
7
ns
tK
tCLK
Clock Period
18
25
ns
tKAX
tCLKHAX
Clock to Address Transition
E =VIL,G =VIH
10
ns
tKHKL
tCLKHCLKL
Clock High
5
ns
tKLKH
tCLKLCLKH
Clock Low
5
ns
tKQV
tCLKHQV
Clock to Data Valid
Clock to BINV Valid
Clock to WAIT Valid
E =VIL,G =VIL
14
18
ns
tKQX
tCLKHQX
Clock to Output Transition
Clock to BINV Transition
Clock to WAIT Transition
E =VIL
44
ns
tLLK
tAVDLCLKH
Latch Enable Low to Clock
7
ns
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