參數(shù)資料
型號(hào)： M58MR064D
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
中文描述： 64兆位4Mb的x16插槽，復(fù)用的I / O，雙行，突發(fā)1.8V電源快閃記憶體
文件頁(yè)數(shù)： 20/52頁(yè)
文件大?。?/td> 399K
代理商： M58MR064D
27/52
M58MR064C, M58MR064D
Table 21. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(P)h = 39h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
0052h
"R"
0049h
"I"
(P+3)h = 3Ch
0031h
Major version number, ASCII
"1"
(P+4)h = 3Dh
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Eh
00E6h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Erase Suspend supported
(1 = Yes, 0 = No)
bit 2
Program Suspend supported
(1 = Yes, 0 = No)
bit 3
Legacy Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 5
Instant individual block locking supported (1 = Yes, 0 = No)
bit 6
Protection bits supported
(1 = Yes, 0 = No)
bit 7
Page mode read supported
(1 = Yes, 0 = No)
bit 8
Synchronous read supported
(1 = Yes, 0 = No)
bit 9
Simultaneous operation supported
(1 = Yes, 0 = No)
bit 10 to 31 Reserved; undefined bits are ‘0’. If bit 31 is ’1’ then another 31
bit field of optional features follows at the end of the bit-30
field.
No
Yes
No
Yes
0003h
(P+7)h
0000h
(P+8)h
0000h
(P+9)h = 42h
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 43h
0003h
Block Protect Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0
Block protect Status Register Protect/Unprotect
bit active
(1 = Yes, 0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2
Reserved for future use; undefined bits are ‘0’
Yes
(P+B)h
0000h
(P+C)h = 45h
0018h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
1.8V
(P+D)h = 46h
00C0h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12V
(P+E)h = 47h
(P+F)h
(P+10)h
(P+11)h
(P+12)h
0000h
Reserved
相關(guān)PDF資料
PDF描述
M59DR032A 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N1T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100N6T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100ZB1T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR032A100ZB6T 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58MR064D100ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064D120ZC6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064DZC 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR064-ZCT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58PR001LE 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*