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參數資料
| 型號： | M470L3224HU0-CA2 |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數： | 7/15頁 |
| 文件大?。?/td> | 175K |
| 代理商： | M470L3224HU0-CA2 |
DDR SDRAM
128MB, 256MB Unbuffered SODIMM
Rev. 1.0 November 2005
17.1 32Mx64 (M470L3224HU0)
17.0 Physical Dimensions
Tolerances :
±.006(.15) unless otherwise specified
The used device is 16Mx16 SDRAM, TSOPII
SDRAM Part No. : K4H561638H
2.70
2.50
Units : Inches (Millimeters)
Full R 2.0
0.17
(4.20)
0.456
11.40
1.896
(47.40)
0.24
(6.0)
0.086
0.7
9
(20.0
0
)
2.15
(63.60)
(67.60)
Detail Z
0.16
± 0.0039
(4.00
± 0.10)
0.04
± 0.0039
(1.00
± 0.1)
2-
φ 0.07
(1.8+0.1/-0.0)
1.25
(3
1.75)
0.16
± 0.039
(4.00
± 0.10)
0.096
(2.40+/-0.1)
0.07
(1.8+/-0.1)
0.150 Max
0.04
± 0.0039
(1.00
± 0.10)
0.157
Min
(4
.00
Min)
(3.80 Max)
0.157
Min
(4
.00
Min)
1
0.024 TYP
0.018
± 0.001
0.01
(0.2+/-0.15)
(0.60 TYP)
0.1
02
Min
(2
.55
)
Detail Y
2
0.098
2.45
40 42
39 41
Z
Y
199
200
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M470L3224JU0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M470L3324BT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BT0-CA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BT0-CB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
| M470L3324BT0-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
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