參數(shù)資料
型號: M470L3224HU0-CA2
元件分類: DRAM
英文描述: 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
封裝: ROHS COMPLIANT, DIMM-184
文件頁數(shù): 10/15頁
文件大小: 175K
代理商: M470L3224HU0-CA2
DDR SDRAM
128MB, 256MB Unbuffered SODIMM
Rev. 1.0 November 2005
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
100MHz
Speed @CL2.5
166MHz
133MHz
Speed @CL3
200MHz
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
200Pin Unbuffered SODIMM based on 256Mb H-die (x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
SSTL_2 Interface
66pin TSOP II Pb-Free package
RoHS compliant
1.0 Ordering Information
2.0 Operating Frequencies
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free)
Part Number
Density
Organization
Component Composition
Height
M470L3224HU0-C(L)CC/B3/A2/B0
256MB
32M x 64
16Mx16 (K4H561638H) * 8EA
1,250mil
3.0 Feature
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