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參數(shù)資料
| 型號(hào)： | M39832-B15WNE6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TVS UNI-DIR 51V 600W DO-15 |
| 中文描述： | 單芯片8兆1兆x8或512KB的x16閃存和256千位并行EEPROM存儲(chǔ)器 |
| 文件頁數(shù)： | 23/36頁 |
| 文件大小： | 253K |
| 代理商： | M39832-B15WNE6T |
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Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
1
μ
A
I
CC1 (1)
Supply Current (Read Flash)
EE = V
IH
, EF = V
IL
, G =
V
IH
, f = 6MHz
10
mA
I
CC2
Supply Current (Read EEPROM)
EE = V
IL
, EF = V
IH
, G =
V
IH
, f = 6MHz
10
mA
I
CC3
Supply Current (Standby)
EF = EE = V
CC
±
0.2V
100
μ
A
I
CC4
Supply Current (Flash Block
Program or Erase)
Byte program, Sector or
Chip Erase in progress
20
mA
I
CC5
Supply Current (EEPROM Write)
During t
WC
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 V
CC
VCC + 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.4
V
V
ID
A9 High Voltage
11.5
12.5
V
I
ID
V
ID
Current
A9 = V
ID
100
μ
A
V
LKO
V
CC
Minimum for Write, Erase and
Program
1.9
2.3
V
Note:
1. When reading the Flash block when an EEPROM byte(s) is under a write cycle, the supply current is I
CC1
+ I
CC5
.
Table 12. DC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 2.7 to 3.6V)
23/36
M39832
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M39832NE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T12WNE1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T12WNE6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T15WNE1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T15WNE6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
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