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參數(shù)資料
| 型號： | M381L6523DUM-CB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | DDR SDRAM的緩沖模塊184pin緩沖模塊的發(fā)展為本的512Mb芯片與64/72-bit非ECC /有鉛ECC的66 TSOP-II免費（符合RoHS） |
| 文件頁數(shù)： | 12/25頁 |
| 文件大小： | 463K |
| 代理商： | M381L6523DUM-CB3 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 0.1 June 2005
(V
DD
=2.7V, T = 10
°
C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
CC(DDR400@CL=3)
480
640
20
120
100
180
240
760
860
880
20
12
1,600
B3(DDR333@CL=2.5)
420
560
20
120
100
120
180
680
740
820
20
12
1,520
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
IDD6
Normal
Low power
IDD7A
Optional
(V
DD
=2.7V, T = 10
°
C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
CC(DDR400@CL=3)
960
1,200
40
240
200
360
480
1,240
1,400
1,760
40
24
3,080
B3(DDR333@CL=2.5)
840
1,080
40
240
200
240
360
1,120
1,200
1,640
40
24
2,880
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
IDD6
Normal
Low power
IDD7A
Optional
9.1 M368L3324DUS [ (32M x 16) * 4, 256MB Non ECC Module ]
9.2 M368L6523DUS [ (64M x 8) * 8, 512MB Non ECC Module ]
9.0 DDR SDRAM IDD spec table
相關PDF資料 |
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