- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384637 > M378T3354BG3-CD5 (SAMSUNG SEMICONDUCTOR CO. LTD.) RES 120 OHM 1/6W 5% CARBON FILM PDF資料下載
參數(shù)資料
| 型號(hào)： | M378T3354BG3-CD5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RES 120 OHM 1/6W 5% CARBON FILM |
| 中文描述： | 240針腳緩沖模塊基于512Mb乙芯片64/72-bit Non-ECC/ECC |
| 文件頁(yè)數(shù)： | 18/22頁(yè) |
| 文件大?。?/td> | 466K |
| 代理商： | M378T3354BG3-CD5 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)當(dāng)前第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)
Rev. 1.5 Aug. 2005
256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Parameter
Symbol
DDR2-533
DDR2-400
Units
Notes
min
max
min
max
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.35
x
0.35
x
tCK
Address and control input hold time
tIH
375
x
475
x
ps
Address and control input setup time
tIS
250
x
350
x
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Active to active command period for 1KB page size
products
tRRD
7.5
x
7.5
x
ns
Active to active command period for
2KB page size products
tRRD
10
x
10
x
ns
Four Activate Window for 1KB page size products
tFAW
37.5
37.5
ns
Four Activate Window for 2KB page size products
tFAW
50
50
ns
CAS to CAS command delay
tCCD
2
2
tCK
Write recovery time
tWR
15
x
15
x
ns
Auto precharge write recovery + precharge time
tDAL
tWR+tRP
x
tWR+tRP
x
tCK
Internal write to read command delay
tWTR
7.5
x
10
x
ns
Internal read to precharge command delay
tRTP
7.5
7.5
ns
Exit self refresh to a non-read command
tXSNR
tRFC + 10
tRFC + 10
ns
Exit self refresh to a read command
tXSRD
200
200
tCK
Exit precharge power down to any non-read command
tXP
2
x
2
x
tCK
Exit active power down to read command
tXARD
2
x
2
x
tCK
Exit active power down to read command
(Slow exit, Lower power)
tXARDS
6 - AL
6 - AL
tCK
CKE minimum pulse width
(high and low pulse width)
t
CKE
3
3
tCK
ODT turn-on delay
t
AOND
2
2
2
2
tCK
ODT turn-on
t
AON
tAC(min)
tAC(max)+1
tAC(min)
tAC(max)+1
ns
ODT turn-on(Power-Down mode)
t
AONPD
tAC(min)+2
2tCK+tAC(m
ax)+1
tAC(min)+2
2tCK+tAC
(max)+1
ns
ODT turn-off delay
t
AOFD
2.5
2.5
2.5
2.5
tCK
ODT turn-off
t
AOF
tAC(min)
tAC(max)+ 0.6
tAC(min)
tAC(max)+ 0.6
ns
ODT turn-off (Power-Down mode)
t
AOFPD
tAC(min)+2
2.5tCK+
tAC(max)+1
tAC(min)+2
2.5tCK+
tAC(max)+1
ns
ODT to power down entry latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
OCD drive mode output delay
tOIT
0
12
0
12
ns
Minimum time clocks remains ON after CKE asynchronously drops LOW
tDelay
tIS+tCK +tIH
tIS+tCK +tIH
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M37920FGCGP | Single Chip 16 Bits CMOS Microcomputer(16位單片機(jī)) |
| M37920FCCGP | Single Chip 16 Bits CMOS Microcomputer(16位單片機(jī)) |
| M37920FCCHP | Single Chip 16 Bits CMOS Microcomputer(16位單片機(jī)) |
| M37920FGCHP | Single Chip 16 Bits CMOS Microcomputer(16位單片機(jī)) |
| M3802 | Single Chip 8 Bits Microcomputer(8位單片機(jī)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M378T3354BGZ0-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
| M378T3354BGZ3-CD5/CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC |
| M378T3354CZ0-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC |
| M378T3354CZ0-CD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC |
| M378T3354CZ0-CE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。