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參數(shù)資料
| 型號： | M368L6523BTN-CB0 |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 3/25頁 |
| 文件大?。?/td> | 441K |
| 代理商： | M368L6523BTN-CB0 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.0 August. 2003
DDR SDRAM IDD spec table
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
B3(DDR333@CL=2.5) AA(DDR266@CL=2)
A2(DDR266@CL=2) B0(DDR266@CL=2.5)
Unit
Notes
IDD0
500
440
mA
IDD1
620
560
mA
IDD2P
2020
mA
IDD2F
120
mA
IDD2Q
100
80
mA
IDD3P
120
mA
IDD3N
200
mA
IDD4R
780
680
mA
IDD4W
860
760
mA
IDD5
1,000
960
mA
IDD6
Normal
20
mA
Low power
12
mA
Optional
IDD7A
1,620
1,440
mA
M368L3324BTM [ (32M x 16) * 8, 256MB Non ECC Module ]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M368L6523BTN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BTN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
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