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參數(shù)資料
| 型號： | M368L6523BTN-CB0 |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 16/25頁 |
| 文件大?。?/td> | 441K |
| 代理商： | M368L6523BTN-CB0 |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.0 August. 2003
Tolerances : ± 0.005(.13) unless otherwise specified.
The used device is 64Mx8 DDR SDRAM, TSOPII.
DDR SDRAM Part No : K4H510838B-T***
5.25 ± 0.006
5.077
Units : Inches (Millimeters)
0.050
0.0078 ± 0.006
(0.20 ± 0.15)
0.
10
0
Mi
n
(2.30
Mi
n)
0.
39
3
(1
0.
00)
(1.270)
0.
100
(2.
5
0
)
Detail B
A
B
(128.950)
(133.350 ± 0.15)
0.250
(6.350)
Detail A
0.157
(4.00)
0.071
(1.80)
0.039 ± 0.002
(1.000 ± 0.050)
(3.80)
2.175
(6.62)
(64.77)
(49.53)
(1
7.
80
)
2.55
1.95
0.26
2.500
0.
7
0.10 M
C
BA
0.1496
(3.00)
0.118
R (2.00)
0.0787
(4.00)
0.1575
1.25
± 0.006
(31.75 ±0.15)
(4
.0
0)
(2X)
0
.157
0.10 M C A M B
(3.00)
0.118
Physical Dimensions : 64Mx72 (M381L6523BTM)
0.07 Max
0.050 ± 0.0039
(1.270 ± 0.10)
(1.20 Max)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M368L6523BTN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BTN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
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