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參數(shù)資料
| 型號(hào)： | M312L6420EUS-CA2 |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁(yè)數(shù)： | 25/30頁(yè) |
| 文件大?。?/td> | 712K |
| 代理商： | M312L6420EUS-CA2 |
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DDR SDRAM
256MB, 512MB, 1GB Registered DIMM
Rev. 1.0 July 2005
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
100MHz
Speed @CL2.5
166MHz
133MHz
Speed @CL3
200MHz
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
184Pin Registered DIMM based on 256Mb E-die (x4, x8)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
SSTL_2 Interface
66pin TSOP II and 60 ball FBGA Leaded & Pb-Free(RoHS compliant) package
1.0 Ordering Information
2.0 Operating Frequencies
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N
(T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free)
(G : 60 FBGA with Leaded, Z : 60 FBGA with Lead-free)
Part Number
Density
Organization
Component Composition
Height
M312L3223ET(U)S-CA2/B0
256MB
32M x 72
32Mx8( K4H560838E) * 9EA
1,200mil
M312L6423ET(U)S-CA2/B0
512MB
64M x 72
32Mx8( K4H560838E) * 18EA
1,200mil
M312L6420ET(U)S-CA2/B0
512MB
64M x 72
64Mx4( K4H560438E) * 18EA
1,200mil
M312L2828ET(U)0-CA2/B0
1GB
128M x 72
st.128Mx4( K4H510638E) * 18EA
1,200mil
M312L3223EG(Z)0-CCC/B3
256MB
32Mx72
32Mx8( K4H560838E) * 9EA
1,125mil
M312L6423EG(Z)0-CCC/B3
512MB
64M x 72
32Mx8( K4H560838E) * 18EA
1,125mil
M312L6420EG(Z)0-CCC/B3
512MB
64M x 72
64Mx4( K4H560438E) * 18EA
1,125mil
M312L2820EG(Z)0-CCC/B3
1GB
128M x 72
64Mx4( K4H560438E) * 36EA
1,200mil
3.0 Feature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M3314-1 | MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER |
| M3372-1 | MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER |
| M3372-3 | MALE, TWO PART BOARD CONNECTOR, WIRE WRAP |
| M3408-1 | MALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SOLDER |
| M3408-3 | MALE, TWO PART BOARD CONNECTOR, WIRE WRAP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M312L6420HUS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M312L6420HUS-CB000 | 制造商:Samsung Semiconductor 功能描述:256 DDR SDRAM MODUL X72 TSOP2-400(LF) - Trays |
| M312L6420JUS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide |
| M312L6423ETS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Registered Module |
| M312L6523BTS-A2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Registered Module |
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