參數(shù)資料
型號(hào): M312L5720DZ3-CB3
元件分類: DRAM
英文描述: 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
封裝: ROHS COMPLIANT, DIMM-184
文件頁(yè)數(shù): 7/28頁(yè)
文件大?。?/td> 661K
代理商: M312L5720DZ3-CB3
DDR SDRAM
512MB, 1GB, 2GB Registered DIMM
Rev. 1.0 April 2006
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Unit
Notes
IDD0
2,340
mA
IDD1
2,880
mA
IDD2P
420
mA
IDD2F
1,170
mA
IDD2Q
780
mA
IDD3P
870
mA
IDD3N
1,440
mA
IDD4R
2,880
mA
IDD4W
2,970
mA
IDD5
4,140
mA
IDD6
Normal
420
mA
Low power
380
mA
IDD7A
6,480
mA
9.3 1GB, 128M x 72 ECC Module (M312L2920DUS)
相關(guān)PDF資料
PDF描述
M32002AMMJFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
M32016BGPJFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
M32026AUMJFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, CMOS OUTPUT
M32012BGPJFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, PECL OUTPUT
M32022BMLJFREQ VCXO, CLOCK, 150 MHz - 1400 MHz, LVDS OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M312L6420ETS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Registered Module
M312L6420HUS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
M312L6420HUS-CB000 制造商:Samsung Semiconductor 功能描述:256 DDR SDRAM MODUL X72 TSOP2-400(LF) - Trays
M312L6420JUS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Product Guide
M312L6423ETS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Registered Module