參數(shù)資料
型號: M2S28D40ATP-75
廠商: Mitsubishi Electric Corporation
英文描述: 128M Double Data Rate Synchronous DRAM
中文描述: 128M的雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 28/36頁
文件大?。?/td> 1216K
代理商: M2S28D40ATP-75
28
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows examples of BL=8.
[Read Interrupted by Burst Stop]
Read Interrupted by TERM (BL=8)
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
CL=2.0
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
相關(guān)PDF資料
PDF描述
M2V28S20TP-6 128 x 64 pixel format, LED Backlight available
M2V28S30TP-6 128 x 64 pixel format, LED Backlight available
M2V28S40TP-6 128 x 64 pixel format, LED Backlight available
M2V28S40ATP-7 128M Synchronous DRAM
M2V28S40ATP-7L 128M Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2S28UC 功能描述:閃存 MACH2 2.5" SATA SSD 8GB COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M2S28UI 制造商:STEC Inc 功能描述:8GB 2.5", SATA,I-TEMP,MACH2 - Bulk
M2S56D20AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D20AKT-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D20AKT-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM