參數(shù)資料
型號(hào)： M2S28D40ATP-10
廠商： Mitsubishi Electric Corporation
英文描述： 128M Double Data Rate Synchronous DRAM
中文描述： 128M的雙數(shù)據(jù)速率同步DRAM
文件頁(yè)數(shù)： 5/36頁(yè)
文件大?。?/td> 1216K
代理商： M2S28D40ATP-10
5
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
BASIC FUNCTIONS
The M2S28D20/30/40ATP provides basic functions, bank (row) activate, burst read / write, bank
(row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS,
/CAS and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip
select, refresh option, and precharge option, respectively. To know the detailed definition of
commands, please see the command truth table.
/CS
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CLK
define basic commands
/CLK
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data appears after
/CAS latency. When A10 =H at this command, the bank is deactivated after the burst read (auto-
precharge,
READA)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written
is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write
(auto-precharge,
WRITEA)
.
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read
/write operation. When A10 =H at this command, all banks are deactivated (precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are generated
internally. After this command, the banks are precharged automatically.
相關(guān)PDF資料
PDF描述
M2S28D40ATP-75 128M Double Data Rate Synchronous DRAM
M2V28S20TP-6 128 x 64 pixel format, LED Backlight available
M2V28S30TP-6 128 x 64 pixel format, LED Backlight available
M2V28S40TP-6 128 x 64 pixel format, LED Backlight available
M2V28S40ATP-7 128M Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2S28D40ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2S28UC 功能描述:閃存 MACH2 2.5" SATA SSD 8GB COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M2S28UI 制造商:STEC Inc 功能描述:8GB 2.5", SATA,I-TEMP,MACH2 - Bulk
M2S56D20AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D20AKT-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*