參數(shù)資料
型號: M2S28D40ATP-10
廠商: Mitsubishi Electric Corporation
英文描述: 128M Double Data Rate Synchronous DRAM
中文描述: 128M的雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 30/36頁
文件大小: 1216K
代理商: M2S28D40ATP-10
30
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
Burst write operation can be interrupted by write of any bank. Random column access is allowed.
WRITE to WRITE interval is minimum 1 CLK.
[Write interrupted by Write]
[Write interrupted by Read]
Burst write operation can be interrupted by read of the same or the other bank. Random column
access is allowed. Internal WRITE to READ command interval(tWTR) is minimum 1 CLK. The
input data on DQ at the interrupting READ cycle is "don't care". tWTR is referenced from the first
positive edge after the last data input.
Write Interrupted by Read (BL=8, CL=2.5)
Command
A0-9,11
A10
BA0,1
DQ
WRITE
Yi
0
00
READ
Yj
0
00
Dai0
Dai1
Qaj0
Qaj1 Qaj2 Qaj3
QS
Qaj4 Qaj5 Qaj6
Qaj7
DM
tWTR
/CLK
CLK
Write Interrupted by Write (BL=8)
Command
A0-9,11
A10
BA0,1
WRITE
Yi
0
00
WRITE
Yk
0
10
WRITE
Yj
0
00
WRITE
Yl
0
00
DQ
Dai1
Daj1
Daj3
Dak1
Dak3
Dak5
Dal1
DQS
Dal2 Dal3
Dal5 Dal6
Dal7
Dal4
Dal0
Dak4
Dak2
Dak0
Dai0
Daj0
Daj2
/CLK
CLK
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