參數(shù)資料
型號(hào): M25P40-VMN6TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 31/40頁(yè)
文件大?。?/td> 232K
代理商: M25P40-VMN6TP
31/40
M25P40
Table 14. Instruction Times (Device Grade 6)
Table 15. Instruction Times (Device Grade 3)
Note: 1. At 85°C
2. This is preliminary data
Table 16. AC Measurement Conditions
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
Test conditions specified in
Table 9.
and
Table 16.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
t
W
Write Status Register Cycle Time
5
15
ms
t
PP
Page Program Cycle Time
1.4
5
ms
t
SE
Sector Erase Cycle Time
1
3
s
t
BE
Bulk Erase Cycle Time
4.5
10
s
Test conditions specified in
Table 9.
and
Table 16.
Symbol
Alt.
Parameter
Min.
Typ.
1,2
Max.
2
Unit
t
W
Write Status Register Cycle Time
8
15
ms
t
PP
Page Program Cycle Time
1.5
5
ms
t
SE
Sector Erase Cycle Time
1
3
s
t
BE
Bulk Erase Cycle Time
4.5
10
s
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Output Timing Reference Voltages
V
CC
/ 2
V
AI07455
0.8VCC
0.2VCC
0.7VCC
0.5VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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